Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions
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== | ==The Bosch process in the DRIE-Pegasus== | ||
The DRIE-Pegasus takes the well established Bosch process known from the [[Specific_Process_Knowledge/Etch/ASE_(Advanced_Silicon_Etch)|ASE]] a significant step further. In the ASE the Bosch process has two cycles, etch and passivation. Within each cycle the process parameters are kept constant (This is, at least, that is the intention - the reality is that the ideal square function is rarely achieved during process parameter changes). In the passivation cycle, a C<sub>4</sub>F<sub>8</sub> plasma is formed using the RF coil power only and a teflon-like coating is created on all surfaces thus protecting the sidewalls in the subsequent etch cycle. In the etch cycle the ion bombardment driven by the platen power ''first'' removes the passivation layer on the surfaces directly exposed to the ions (i.e. horizontal surfaces) ''then'' as the bottom of the structures are opened the etch itself starts. Here, it is clear that one can distinguish two phases of the etch cycle; one where the ion bombardment removes the polymer and one where the actual etching takes place. | The DRIE-Pegasus takes the well established Bosch process known from the [[Specific_Process_Knowledge/Etch/ASE_(Advanced_Silicon_Etch)|ASE]] a significant step further. In the ASE the Bosch process has two cycles, etch and passivation. Within each cycle the process parameters are kept constant (This is, at least, that is the intention - the reality is that the ideal square function is rarely achieved during process parameter changes). In the passivation cycle, a C<sub>4</sub>F<sub>8</sub> plasma is formed using the RF coil power only and a teflon-like coating is created on all surfaces thus protecting the sidewalls in the subsequent etch cycle. In the etch cycle the ion bombardment driven by the platen power ''first'' removes the passivation layer on the surfaces directly exposed to the ions (i.e. horizontal surfaces) ''then'' as the bottom of the structures are opened the etch itself starts. Here, it is clear that one can distinguish two phases of the etch cycle; one where the ion bombardment removes the polymer and one where the actual etching takes place. Considering what process conditions are favorable we realize that | ||
* the ion bombardment requires a low pressure in order for the ions to have a long mean free path and hence | |||
* a higher pressure during the etch allows more reactive species to | |||
the etching what the physical requirements | |||
Revision as of 13:11, 17 May 2011
The Bosch process in the DRIE-Pegasus
The DRIE-Pegasus takes the well established Bosch process known from the ASE a significant step further. In the ASE the Bosch process has two cycles, etch and passivation. Within each cycle the process parameters are kept constant (This is, at least, that is the intention - the reality is that the ideal square function is rarely achieved during process parameter changes). In the passivation cycle, a C4F8 plasma is formed using the RF coil power only and a teflon-like coating is created on all surfaces thus protecting the sidewalls in the subsequent etch cycle. In the etch cycle the ion bombardment driven by the platen power first removes the passivation layer on the surfaces directly exposed to the ions (i.e. horizontal surfaces) then as the bottom of the structures are opened the etch itself starts. Here, it is clear that one can distinguish two phases of the etch cycle; one where the ion bombardment removes the polymer and one where the actual etching takes place. Considering what process conditions are favorable we realize that
* the ion bombardment requires a low pressure in order for the ions to have a long mean free path and hence * a higher pressure during the etch allows more reactive species to
the etching what the physical requirements
Details on DRIE-Pegasus
Further info: