Specific Process Knowledge/Etch/Titanium Oxide: Difference between revisions

Revision as of 13:18, 13 May 2025

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	BHF	ICP Metal Etcher
Generel description	Wet etch of TiO2 (ALD)		Dry plasma etch of Al	Sputtering of Al - pure physical etch.
Etch rate range	2,5 nm/min	~30nm/min (pure Al)	~350 nm/min (depending on features size and etch load)	~30nm/min (not tested yet)
Etch profile	Isotropic	Isotropic	Anisotropic (vertical sidewalls)	Anisotropic (angles sidewalls, typical around 70 dg)
Substrate size	100 mm wafers (in bath) 150 mm wafers (in bath) Any size (in beaker)	Chips (6-60 mm) 100 mm wafers 150 mm wafers	smaller pieces on a carrier wafer #1 100mm wafers (when set up to 100mm wafers) #1 150mm wafers (when set up to 150mm wafers)	Smaller pieces glued to carrier wafer #1 50mm wafer #1 100mm wafer #1 150mm wafer #1 200mm wafer
Allowed materials	In 'Aluminium Etch' bath: See Cross Contamination Sheet for Aluminium Etch bath (require login) In beaker: Any material	Every thing that is allowed in the Developer: TMAH Manual	Silicon Quartz/fused silica Photoresist/e-beam resist PolySilicon, Silicon oxide Silicon (oxy)nitride Aluminium Titanium Chromium	Silicon Silicon oxides Silicon nitrides Metals from the +list Metals from the -list Alloys from the above list Stainless steel Glass III-V materials Resists Polymers Capton tape

@@ Line 26: / Line 26: @@
 |-style="background:WhiteSmoke; color:black"
 !Generel description
-|Wet etch of Al
+|Wet etch of TiO2 (ALD)
-|Wet etch/removal: TMAH<br>
+|
-Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow [[Specific_Process_Knowledge/Lithography/EBeamLithography#Aluminum_coating| here]]
 |Dry plasma etch of Al
 |Sputtering of Al - pure physical etch.
@@ Line 36: / Line 35: @@
 |-style="background:LightGrey; color:black"
 !Etch rate range
-|
+|2,5 nm/min
-*~60-100nm/min
 |
 *~30nm/min (pure Al)