Specific Process Knowledge/Etch/Titanium Oxide: Difference between revisions
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*[[/ICP metal|Titanium Oxide etch using ICP metal]] | *[[/ICP metal|Titanium Oxide etch using ICP metal]] | ||
==Comparison of Aluminium Etch Methods [[Image:section under construction.jpg|70px]]== | |||
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![[Specific Process Knowledge/Etch/Wet Aluminium Etch|Aluminium Etch]] | |||
![[Specific_Process_Knowledge/Lithography/Development#Developer:_TMAH_Manual|Developer TMAH manual]] | |||
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]] | |||
![[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE (Ionfab300+)]] | |||
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!Generel description | |||
|Wet etch of Al | |||
|Wet etch/removal: TMAH<br> | |||
Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow [[Specific_Process_Knowledge/Lithography/EBeamLithography#Aluminum_coating| here]] | |||
|Dry plasma etch of Al | |||
|Sputtering of Al - pure physical etch. | |||
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!Etch rate range | |||
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*~60-100nm/min | |||
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*~30nm/min (pure Al) | |||
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*~350 nm/min (depending on features size and etch load) | |||
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*~30nm/min (not tested yet) | |||
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!Etch profile | |||
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*Isotropic | |||
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*Isotropic | |||
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*Anisotropic (vertical sidewalls) | |||
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*Anisotropic (angles sidewalls, typical around 70 dg) | |||
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!Substrate size | |||
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*100 mm wafers (in bath) | |||
*150 mm wafers (in bath) | |||
*Any size (in beaker) | |||
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*Chips (6-60 mm) | |||
*100 mm wafers | |||
*150 mm wafers | |||
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*smaller pieces on a carrier wafer | |||
*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers) | |||
*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers) | |||
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Smaller pieces glued to carrier wafer | |||
*<nowiki>#</nowiki>1 50mm wafer | |||
*<nowiki>#</nowiki>1 100mm wafer | |||
*<nowiki>#</nowiki>1 150mm wafer | |||
*<nowiki>#</nowiki>1 200mm wafer | |||
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!'''Allowed materials''' | |||
|In 'Aluminium Etch' bath: | |||
*See Cross Contamination Sheet for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=381 Aluminium Etch] bath (require login) | |||
In beaker: | |||
*Any material | |||
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*Every thing that is allowed in the Developer: TMAH Manual | |||
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*Silicon | |||
*Quartz/fused silica | |||
*Photoresist/e-beam resist | |||
*PolySilicon, | |||
*Silicon oxide | |||
*Silicon (oxy)nitride | |||
*Aluminium | |||
*Titanium | |||
*Chromium | |||
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*Silicon | |||
*Silicon oxides | |||
*Silicon nitrides | |||
*Metals from the +list | |||
*Metals from the -list | |||
*Alloys from the above list | |||
*Stainless steel | |||
*Glass | |||
*III-V materials | |||
*Resists | |||
*Polymers | |||
*Capton tape | |||
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