Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions
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Revision as of 12:49, 11 May 2011
Recipe | nano1.0 | nano1.1 | nano1.2 | nano1.3 | nano1.21 | nano1.4 | nano1.41 | nano1.42 | nano1.43 |
---|---|---|---|---|---|---|---|---|---|
C4F8 (sccm) | 52 | 52 | 52 | 52 | 75 | 75 | 75 | 75 | 75 |
SF6 (sccm) | 38 | 38 | 38 | 38 | 38 | 38 | 38 | 38 | 38 |
O2 (sccm) | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 |
Coil power (W) | 800 (F) | 600 (F) | 800 (F) | 600 (F) | 800 (F) | 800 (F) | 800 (F) | 800 (F) | 800 (F) |
Platen power (W) | 50 | 50 | 50 | 40 | 50 | 50 | 75 | 40 | 30 |
Pressure (mtorr) | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
Temperature (degs C) | 10 | 10 | -10 | -10 | -10 | -20 | -20 | -20 | -20 |
Process time (s) | 120 | 120 | 120 | 120 | 120 | 120 | 120 | 120 | 120 |
Etch rates (nm/min) | |||||||||
Averages | 295 | 228 | 299 | 235 | 183 | 183 | 166 | 160 | 148 |
Std. Dev | 36 | 29 | 37 | 20 | 9 | 9 | 9 | 8 | 6 |
Zep etch rate (nm/min) | |||||||||
172 | 95 | 94 | 69 | 67 | 101 | 65 | 55 | ||
Sidewall angle (degrees) | |||||||||
Averages | 93 | 94 | 92 | 94 | 91 | 91 | 90 | 90 | 90 |
Std. Dev | 1 | 1 | 0 | 1 | 0 | 0 | 1 | 0 | 0 |
CD loss (nm pr edge) | |||||||||
Averages | -11 | -13 | -17 | -10 | -10 | -10 | -20 | -13 | -24 |
Std. Dev | 12 | 10 | 11 | 14 | 15 | 15 | 16 | 15 | 21 |
Bowing (nm) | |||||||||
Averages | 31 | 42 | 13 | 16 | 6 | 6 | 3 | -3 | 0 |
Std. Dev | 7 | 6 | 4 | 3 | 2 | 2 | 2 | 3 | 1 |
Botton curvature | |||||||||
Averages | -45 | -45 | -44 | -43 | -32 | -32 | -34 | -32 | -39 |
Std. Dev | 5 | 7 | 4 | 9 | 10 | 10 | 9 | 8 | 9 |
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The nanoetch