Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141: Difference between revisions
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C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 75 W PP, -20 degs, 120 secs | C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 75 W PP, -20 degs, 120 secs | ||
</gallery> | </gallery> | ||
{| {{table}} | |||
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width''' | |||
| align="center" style="background:#f0f0f0;"|'''''' | |||
| align="center" style="background:#f0f0f0;"|'''30''' | |||
| align="center" style="background:#f0f0f0;"|'''60''' | |||
| align="center" style="background:#f0f0f0;"|'''90''' | |||
| align="center" style="background:#f0f0f0;"|'''120''' | |||
| align="center" style="background:#f0f0f0;"|'''150''' | |||
| align="center" style="background:#f0f0f0;"|'''Average''' | |||
| align="center" style="background:#f0f0f0;"|'''Std. dev.''' | |||
|- | |||
| Etch rates||nm/min||155||161||164||171||179||166||9 | |||
|- | |||
| Sidewall angle||degs||91||90||90||90||90||90||1 | |||
|- | |||
| CD loss||nm/edge||-1||-11||-13||-36||-37||-20||16 | |||
|- | |||
| CD loss foot||nm/edge||4||1||0||-22||-10||-5||11 | |||
|- | |||
| Bowing||||5||2||5||4||1||3||2 | |||
|- | |||
| Bottom curvature||||-45||-40||-34||-29||-23||-34||9 | |||
|- | |||
| zep||nm/min||||||||||||101|| | |||
|- | |||
| | |||
|} | |||