Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14: Difference between revisions
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C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, -20 degs, 120 secs | C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, -20 degs, 120 secs | ||
</gallery> | </gallery> | ||
{| {{table}} | |||
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width''' | |||
| align="center" style="background:#f0f0f0;"|'''''' | |||
| align="center" style="background:#f0f0f0;"|'''30''' | |||
| align="center" style="background:#f0f0f0;"|'''60''' | |||
| align="center" style="background:#f0f0f0;"|'''90''' | |||
| align="center" style="background:#f0f0f0;"|'''120''' | |||
| align="center" style="background:#f0f0f0;"|'''150''' | |||
| align="center" style="background:#f0f0f0;"|'''Average''' | |||
| align="center" style="background:#f0f0f0;"|'''Std. dev.''' | |||
|- | |||
| Etch rates||nm/min||168||182||185||189||191||183||9 | |||
|- | |||
| Sidewall angle||degs||91||91||91||91||90||91||0 | |||
|- | |||
| CD loss||nm/edge||7||-3||-3||-25||-26||-10||15 | |||
|- | |||
| CD loss foot||nm/edge||12||9||10||-11||1||4||9 | |||
|- | |||
| Bowing||||9||6||4||5||7||6||2 | |||
|- | |||
| Bottom curvature||||-47||-34||-34||-26||-19||-32||10 | |||
|- | |||
| zep||nm/min||||||||||||67|| | |||
|- | |||
| | |||
|} | |||