Jump to content

Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions

← Older editNewer edit →
VisualWikitext
Mbec (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
186 edits
Mbec (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
186 edits
Line 241: Line 241:
!  
!  
! 1% HF in RCA Bench
! 1% HF in RCA Bench
! 1% HF PP-bath
! 10% HF in D3 wet bench 5 (Oxide etch 3)
! 1% HF Plastic beaker
! 1% HF Plastic beaker


Line 255: Line 255:
!Size of substrate
!Size of substrate
|2"-6" wafers
|2"-6" wafers
|2"- 4" wafers or any that fits in a dedicated holder
|2"- 6" wafers or any that fits in a dedicated holder
|2"- 4" wafers or any that fits in a dedicated holder
|2"- 4" wafers or any that fits in a dedicated holder
|-
|-
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)"