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*Puddle development in 2.38% TMAH (AZ 726 MIF): ~4 µm/min
*Puddle development in 2.38% TMAH (AZ 726 MIF): ~4 µm/min


A 2 µm nLOF resist film is fully developed in ~30 s in 2.38% TMAH (AZ 726 MIF). However, the development can be continued to 60 s in order to get a more negative resist profile (due to increased under-cut).


A 2 µm nLOF resist film is fully developed in ~30 s in 2.38% TMAH (AZ 726 MIF). However, the development can be continued to 60 s in order to get a more negative resist profile (due to increased under-cut).
===Solvent development===
Cross-linking negative resists have the potential to be developed using organic solvents instead of the normally used alkaline aqueous solutions. A small test of this was carried out by Thomas Anhøj @ DTU Nanolab, showing that nLOF 2020 could potentially be used for water-free lithography.  
A small report on the tests can be found here:
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