Specific Process Knowledge/Etch/III-V ICP/GaN

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GaN etching using III-V ICP

Recipe	GaN Etch	GaN Etch for Si check
Cl2 flow	30 sccm	27 sccm
Ar flow	10 sccm	3 sccm
BCl3 flow	0 sccm	3 sccm
Platen power	200 W	75 W
Coil power	600 W	400 W
Pressure	2 mTorr	4 mTorr
Platen chiller temperature	20 oC	20 oC

Results (GaN Etch)
GaN etch rate	550-580 nm/min
SiO2 etch rate	110-120 nm/min
Sidewall angle	~ 90 o

Results (GaN Etch for Si check)
Si etch rate	~200 nm/min (bghe 2017-01-17) full 4" wafer

Result of GaN etching. Oleksii Kopylov, DTU Photonics, 2011.