Specific Process Knowledge/Etch/Lithium niobate: Difference between revisions
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![[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE (Ionfab300+)]] | |||
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]] | |||
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!Generel description | !Generel description | ||
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|Sputtering of Ti - pure physical etch | |||
|Dry plasma etch of Ti | |||
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* | * | ||
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* | **~20nm/min | ||
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*~50-200 nm/min (depending on features size and etch load and recipe settings) | *~50-200 nm/min (depending on features size and etch load and recipe settings) | ||
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* | * | ||
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* | **Anisotropic (angles sidewalls, typical around 70 dg) | ||
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*Anisotropic (vertical sidewalls) | *Anisotropic (vertical sidewalls) | ||
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Smaller pieces glued to carrier wafer | |||
*<nowiki>#</nowiki>1 50mm wafer | |||
*<nowiki>#</nowiki>1 100mm wafer | |||
*<nowiki>#</nowiki>1 150mm wafer | |||
*<nowiki>#</nowiki>1 200mm wafer | |||
* | * | ||
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*<nowiki>#</nowiki>1 150mm wafers | *<nowiki>#</nowiki>1 150mm wafers | ||
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!'''Allowed materials''' | !'''Allowed materials''' | ||
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*Silicon | *Silicon | ||
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*Polymers | *Polymers | ||
*Capton tape | *Capton tape | ||
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*Silicon | |||
*Quartz/fused silica | |||
*Photoresist/e-beam resist | |||
*PolySilicon, | |||
*Silicon oxide | |||
*Silicon (oxy)nitride | |||
*Aluminium | |||
*Titanium | |||
*Chromium | |||
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