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Specific Process Knowledge/Etch/Lithium niobate: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,301 edits
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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
![[Specific Process Knowledge/Etch/Wet Titanium Etch|Ti wet etch 1]]
!
![[Specific Process Knowledge/Etch/Wet Titanium Etch|Ti wet etch 2]]
!
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE (Ionfab300+)]]
![[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE (Ionfab300+)]]
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|BHF Etch of titanium with or without photoresist mask.
|
|Cold RCA1 mix etch of titanium (as stripper or with eagle resist).
|
|Dry plasma etch of Ti
|Dry plasma etch of Ti
|Sputtering of Ti - pure physical etch
|Sputtering of Ti - pure physical etch
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!Etch rate range
!Etch rate range
|
|
*~?nm/min
*
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*~?nm/min
*
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*~50-200 nm/min (depending on features size and etch load and recipe settings)  
*~50-200 nm/min (depending on features size and etch load and recipe settings)  
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!Etch profile
!Etch profile
|
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*Isotropic
*
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*Isotropic
*
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*Anisotropic (vertical sidewalls)
*Anisotropic (vertical sidewalls)
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!Substrate size
!Substrate size
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*Any size and number that can go inside the beaker in use
*
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*Any size and number that can go inside the beaker in use
*
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*smaller pieces on a carrier wafer
*smaller pieces on a carrier wafer
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!'''Allowed materials'''
!'''Allowed materials'''
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No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
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No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|
|
*Silicon
*Silicon
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