Jump to content

Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions

← Older editNewer edit →
VisualWikitext
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,301 edits
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,301 edits
Line 112: Line 112:
*Stoichiometric LPCVD nitride: ~0.65-8 nm/min <!-- Copyrigth issues kabi (''Yannick Seis, KU, 2019'')-->
*Stoichiometric LPCVD nitride: ~0.65-8 nm/min <!-- Copyrigth issues kabi (''Yannick Seis, KU, 2019'')-->
|
|
*Process dependent.
*From 0 to ~300 nm/min
|
|
*Probably betweeb 20-300 nm/min depending on the process parameters  
*Probably between 20-300 nm/min depending on the process parameters
|
|
*Process dependent.  
*Process dependent.  
*Tested once to ~60nm/min
*from 0 to ~500 nm/min
|
|
*Process dependent.
*Process dependent.
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/Etching_of_Silicon_Nitride"