Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions
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![[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]] | ![[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]] | ||
![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|BHF]] | ![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|BHF]] | ||
!Pegasus 4 | |||
![[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)|ASE]] | ![[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)|ASE]] | ||
![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]] | ![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]] | ||
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*Isotropic etch | *Isotropic etch | ||
*Well suited for removing all PECVD nitride on a wafer surface (nitride strip) without a mask. Etches LPCVD nitride very slowly | *Well suited for removing all PECVD nitride on a wafer surface (nitride strip) without a mask. Etches LPCVD nitride very slowly | ||
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* Anisotropic etch: vertical sidewalls | |||
* With cassette loader for batch processing. | |||
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*Anisotropic etch: vertical sidewalls | *Anisotropic etch: vertical sidewalls | ||
*Primarily for samples with small amounts of metal | |||
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*Anisotropic etch: vertical sidewalls | *Anisotropic etch: vertical sidewalls | ||
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*PolySilicon | *PolySilicon | ||
*Blue film | *Blue film | ||
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*Photoresist | |||
*DUV resist | |||
*E-beam resist | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Aluminium | |||
*Chromium (if needed) | |||
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*Photoresist | *Photoresist | ||
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*Silicon Nitride | *Silicon Nitride | ||
*Aluminium | *Aluminium | ||
*Chromium ( | *Chromium (if needed) | ||
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*Any material that is accepted in the machine | *Any material that is accepted in the machine | ||
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*PECVD nitride: ~40.0-100.0 nm/min | *PECVD nitride: ~40.0-100.0 nm/min | ||
*Stoichiometric LPCVD nitride: ~0.65-8 nm/min <!-- Copyrigth issues kabi (''Yannick Seis, KU, 2019'')--> | *Stoichiometric LPCVD nitride: ~0.65-8 nm/min <!-- Copyrigth issues kabi (''Yannick Seis, KU, 2019'')--> | ||
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*Probably betweeb 20-300 nm/min depending on the process parameters | *Probably betweeb 20-300 nm/min depending on the process parameters | ||
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*<nowiki>#</nowiki>1-25 4"-6" wafers | *<nowiki>#</nowiki>1-25 4"-6" wafers | ||
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*As many small samples as can be bonded on a 150mm wafer | |||
*50 mm wafers if bonded on a 150mm wafer | |||
*<nowiki>#</nowiki>1 100 mm wafer if bonded on a 150 mm wafer | |||
*#1 150 mm wafer | |||
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*As many small samples as can be fitted on the 100mm carrier (bad/no cooling!) | *As many small samples as can be fitted on the 100mm carrier (bad/no cooling!) | ||
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*<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer | *<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer | ||
*<nowiki>#</nowiki>1 100 mm wafer | *<nowiki>#</nowiki>1 100 mm wafer | ||
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*As many samples as can be securely fitted on a up to 200mm wafer | *As many samples as can be securely fitted on a up to 200mm wafer | ||
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*Photoresist | *Photoresist | ||
*Blue film | *Blue film | ||
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*Silicon | *Silicon | ||