Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions

Revision as of 10:11, 10 May 2011

Recipe	nano1.0	nano1.1	nano1.2	nano1.3	nano1.21	nano1.4	nano1.41	nano1.42	nano1.43
C₄F₈ (sccm)	52	52	52	52	75	75	75	75	75
SF₆ (sccm)	38	38	38	38	38	38	38	38	38
O₂ (sccm)	0	0	0	0	0	0	0	0	0
Coil power (W)	800 (forward)	600 (forward)	800 (forward)	600 (forward)	800 (forward)	800 (forward)	800 (forward)	800 (forward)	800 (forward)
Platen power (W)	50	50	50	40	50	50	75	40	30
Pressure (mtorr)	4	4	4	4	4	4	4	4	4
Temperature (degs C)	10	10	-10	-10	-10	-20	-20	-20	-20
Process time (s)	120	120	120	120	120	120	120	120	120
Etch rates (nm/min)
Averages	295	228	299	235	183	183	166	160	148
Std. Dev	36	29	37	20	9	9	9	8	6
Zep etch rate (nm/min)
		172	95	94	69	67	101	65	55
Sidewall angle (degrees)
Averages	93	94	92	94	91	91	90	90	90
Std. Dev	1	1	0	1	0	0	1	0	0
CD loss (nm pr edge)
Averages	-11	-13	-17	-10	-10	-10	-20	-13	-24
Std. Dev	12	10	11	14	15	15	16	15	21
Bowing (nm)
Averages	31	42	13	16	6	6	3	-3	0
Std. Dev	7	6	4	3	2	2	2	3	1
Botton curvature
Averages	-45	-45	-44	-43	-32	-32	-34	-32	-39
Std. Dev	5	7	4	9	10	10	9	8	9
Images	Images	Images	Images	Images	Images	Images	Images	Images	Images

The nanoetch

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 ! colspan="10" align="center"| Zep etch rate (nm/min)
 |-
-| ||0||172||95||94||69||67||101||65||55
+| || ||172||95||94||69||67||101||65||55
 |-
 ! colspan="10" align="center"| Sidewall angle (degrees)