Deposition of SiN with PECVD4/NEW TESTS QC: Difference between revisions
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=== Data with HF generator=25W === | === Data with HF generator=25W === | ||
[[File:25W - thickness PECVD4 nitride QC.png|left|thumb|343x343px|Data from november to february of 15min QC nitride using 25W. The | [[File:25W - thickness PECVD4 nitride QC.png|left|thumb|343x343px|Data from november to february of 15min QC nitride using 25W. The graph showcases thickness with standard error across time.]] | ||
[[File:25W - Thickness filmtek vs ellipsometer.png|thumb| | [[File:25W - Thickness filmtek vs ellipsometer.png|thumb|351x351px|Wafers had the thickness measured in both Filmtek and Ellipsometer, comparing the results.]] | ||
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[[File:25W - refractive index QC nitride.png|left|thumb|345x345px|Data from november to february of 15min QC nitride using 25W. The graph showcases the refractive index with standard error across time.]] | |||
[[File:25W - refractive index filmtek vs ellipsometer.png|thumb|353x353px|Wafers had the refractive index measured in both Filmtek and Ellipsometer, comparing the results.]] | |||
=== Data with HF generator=100W === | === Data with HF generator=100W === | ||
Revision as of 14:55, 4 March 2025
Unless otherwise stated, this page is written by DTU Nanolab internal (Feb 2025)), for more info contact mfarin.
New QC tests on Silicon nitride - PECVD4
Due to recent instability in the High-Frequency (HF) generator, the thickness deposited during the QC HF Nitride process has not been very reliable. To better control it, new tests were performed. Since the recipe uses 25W of HF, and the main variation was the reflected power—oscillating between ~5W and 10W—higher power levels were tested. When using 100W, the reflected power was significantly more stable. Below, some of the data is presented, comparing 25W and 100W of HF power, as well as results from different characterization tools (Ellipsometer and FilmTek).
Data with HF generator=25W
