Specific Process Knowledge/Lithography/Strip: Difference between revisions
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==Overview of wet bench 06 and 07== | ==Overview of wet bench 06 and 07== | ||
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! !! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]] !! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]] | |||
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! scope=row| Process | |||
! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]] | | Wet resist strip || Metal lift-off process | ||
! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]] | |||
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|Wet | |||
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! scope=row| Chemical | |||
| | | Remover 1165 (NMP) || Remover 1165 (NMP) | ||
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! scope=row| Process temperature | |||
| | | Up to 65°C || Up to 65°C | ||
|Up to 65°C | |||
|Up to 65°C | |||
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! scope=row| Substrate batch | |||
| | | 1-25 wafers || 1-25 wafers | ||
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1 - 25 wafers | |||
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1 - 25 wafers | |||
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! scope=row| Substrate size | |||
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*100 mm wafers | *100 mm wafers | ||
*150 mm wafers | *150 mm wafers | ||
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*150 mm wafers | *150 mm wafers | ||
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! scope=row| Materials allowed | |||
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*Silicon | *Silicon | ||
*Silicon | *Silicon oxide | ||
*Silicon | *Silicon nitride | ||
*Silicon | *Silicon oxynitride | ||
| | | All metals except Type IV (Pb, Te) | ||
All metals except Type IV (Pb, Te) | |||
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<br clear="all" /> | <br clear="all" /> | ||