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Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
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= Plasma Ashing process parameters=
= Plasma Ashing process parameters=


{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
{| class="wikitable"
|-
|-
 
! Process parameter !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping]] !! [[Specific_Process_Knowledge/Lithography/Descum|Descum]] !! Surface treatment !! Other ashing of organic material
|-style="background:silver; color:black"
|-
|
! scope=row| Process pressure
! Photoresist stripping
| 1.3 mbar || 1.3 mbar || 0.5-1.5 mbar || 0.5-1.5 mbar
! [[Specific_Process_Knowledge/Lithography/Descum|Descum after lithography]]
! Surface treatment of plastic, ceramic and metal
! Ashing of organic material
|-  
 
|-style="background:whitesmoke; color:black"
!Process pressure
|1.3 mbar
|1.3 mbar  
|0.5-1.5 mbar  
|0.5-1.5 mbar
|-
|-
 
! scope=row| Process gasses
|-style="background:silver; color:black"
|  
!Process gases
|
*O<sub>2</sub> (100 sccm)
*O<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
Line 157: Line 144:
*O<sub>2</sub> (100 sccm)
*O<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
|O<sub>2</sub>, CF<sub>4</sub>, N<sub>2</sub> or their mixtures
|
|O<sub>2</sub>
*O<sub>2</sub>
|-
*N<sub>2</sub>
 
*CF<sub>4</sub>
|-style="background:whitesmoke; color:black"
|
!Process  power
*O<sub>2</sub>
|1000 W
|200 W
|150-1000 W
|1000 W or less for heat- sensitive materials
|-
|-
 
! scope=row| Process power
|-style="background:silver; color:black"
| 1000 W || 200 W || 150-1000 W || 150-1000 W
!Process time
|5-90 minutes
|1-30 minutes
|seconds to minutes
|Between 0.5 and 20 hours, depending on the material
|-
|-
 
! scope=row| Process time
|-style="background:whitesmoke; color:black"
| 20-90 minutes || 5-15 minutes || Seconds to minutes || Many hours, material dependent
!Batch size
|1-25
|1-25
|1 wafer at a time
|1 wafer at a time, use a container, e.g Petri dish
|-
|-
! scope=row| Substrate batch
| 1-25 || 1-25 || 1 || 1
|}
|}
<br clear="all" />
<br clear="all" />
<!--
Typical process time for stripping in plasma asher 1 or 2:
*1.5 µm AZ 5214E resist film: ~15 min
*10 µm AZ 4562 resist film: ~45 min
Typical process parameters:
*O<sub>2</sub>: 400 ml/min
*N<sub>2</sub>: 70 ml/min
*Power: 1000 W
A typical descum process in plasma asher 1 or 2:
*O<sub>2</sub>: 70 ml/min
*N<sub>2</sub>: 70 ml/min
*Power: 150 W
*Time : 10 min
Be sure to wait for chamber to cool down to room temperature, before runinng descum processes in plasma asher 1 or 2. At a load of 2 Fused silica wafers, the amount of resist removed will be 10 - 1500 nm.
'''NB: Use dedicated descum asher Plasma Asher 3: Descum for descumming.'''
-->


=Plasma Asher 1=
=Plasma Asher 1=
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