Specific Process Knowledge/Lithography/Strip: Difference between revisions
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==Comparison of ashing rate between substrate sizes for plasma asher 4 & 5== | ==Comparison of ashing rate between substrate sizes for plasma asher 4 & 5== | ||
[[File: | [[File:PA_comparison_v3.png|400px|thumb|Comparison of ashing rate with different substrate sizes. Process was done using a single substrate placed in the middle of the glass boat, which was placed in the center of the chamber.|right]] | ||
The ashing rate is | The ashing rate is highest for 100 mm substrates, lower for 150 mm substrates and even lower for 200 mm substrates. | ||
All substrate sizes | All substrate sizes follows the same pattern: | ||
*Ashing rate increases with a higher percentage nitrogen in the gas mix | |||
*Ashing rate increases with a higher chamber pressure | |||
*The total gas flow has only little influence on the ashing rate, but <i>slightly</i> favors the lower flow rate of 200 sccm, similar to previous experiment results | |||
<br clear="all" /> | <br clear="all" /> | ||
'''Process parameter impact on ashing rate'''<br> | '''Process parameter impact on ashing rate'''<br> | ||
Investigating the ashing rate using linear regression models on the process parameters, indicates that the gas mix and the chamber pressure has a significant impact on the ashing rate, while the gas flow has only little effect: | |||
<gallery mode="packed-hover" heights="150"> | <gallery mode="packed-hover" heights="150"> | ||
ParamEffect_100_mm_v1.png|100 mm process parameter impact | ParamEffect_100_mm_v1.png|100 mm process parameter impact | ||