Specific Process Knowledge/Lithography/Descum: Difference between revisions
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=Plasma Asher 4= | =Plasma Asher 4= | ||
==Process gas ratio for plasma asher 4 & 5== | |||
[[File:PA_descum_single_v1.png|400px|thumb|Ashing amount and ashing rate when processing a single 100 mm wafer.|right]] | |||
[[File:PA_descum_multi_v1.png|400px|thumb|Ashing amount and ashing rate when processing multiple 100 mm wafers. Test measured on the center of 3 wafers.|right]] | |||
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login''' | |||
Descum of AZ 5214E on 100 mm wafers. The descum process was tested for single substrates, as well as 3 substrates, placed vertically in the glass boat. For the 3 substrates only the center substrate was used for testing, the front and back wafers were used as dummy wafers. | |||
{| class="wikitable" | |||
|- | |||
! Test setup !! Single substrate !! Center of 3 substrates | |||
|- | |||
! scope=row| Test results | |||
| Ashing rate: 5.7 ±2.1 µm/min<br>Non-uniformity: 0.6 ±0.4% || Ashing rate: 3.8 ±1.6 µm/min<br>Non-uniformity: 0.4 ±0.2% | |||
|- | |||
! scope=row| Wafers | |||
| 1 || 3 | |||
|- | |||
! scope=row| Wafer size | |||
| 100 mm || 100 mm | |||
|- | |||
! scope=row| Boat position | |||
| Center of chamber || Center of chamber | |||
|- | |||
! scope=row| Test wafer position | |||
| Center of boat || Center of boat | |||
|- | |||
! scope=row| Total gas flow rate | |||
| 200 sccm || 200 sccm | |||
|- | |||
! scope=row| Gas mix ratio | |||
| 50% N<sub>2</sub> || 50% N<sub>2</sub> | |||
|- | |||
! scope=row| Chamber pressure | |||
| 1.3 mbar || 1.3 mbar | |||
|- | |||
! scope=row| Power | |||
| 200 W || 200 W | |||
|- | |||
! scope=row| Test processing time | |||
| Tested parameter || Tested parameter | |||
|- | |||
! scope=row| Test average temperature | |||
| 33°C || 33°C | |||
|} | |||
<br clear="all" /> | |||
=Plasma Asher 5= | =Plasma Asher 5= | ||
<span style="color:red">Coming soon</span> | <span style="color:red">Coming soon</span> | ||
Revision as of 11:44, 25 February 2025
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Plasma Asher 1
Plasma asher 1 was decommissioned 2024-12-02.
Information about decommissioned tool can be found here.
Plasma Asher 2
Plasma asher 2 was decommissioned 2024-12-02.
Information about decommissioned tool can be found here.
Plasma Asher 3: Descum
The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager - requires login
Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a time. The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).
Ashing of AZ MiR701 resist:
You can use two different descum process developments: you can either change power settings or processing chamber pressure.
Testing different power settings:
Recipe settings:
- O2 flow: 5 sccm
- N2 flow: 0
- Pressure: 0.2 mbar
- Power: Varied
Experiment parameters:
|
Testing different pressure settings:
Recipe settings:
- O2 flow: varied
- N2 flow: 0
- Pressure: varied
- Power: V100% (100 W)
Experiment parameters:
|
Ashing of AZ5214E resist:
Recipe settings:
- O2 flow: varied
- N2 flow: 0
- Pressure: varied
- Power: V100% (100 W)
Experiment parameters:
|
Plasma Asher 4
Process gas ratio for plasma asher 4 & 5
The user manual, risk assessment, and contact information can be found in LabManager - requires login
Descum of AZ 5214E on 100 mm wafers. The descum process was tested for single substrates, as well as 3 substrates, placed vertically in the glass boat. For the 3 substrates only the center substrate was used for testing, the front and back wafers were used as dummy wafers.
| Test setup | Single substrate | Center of 3 substrates |
|---|---|---|
| Test results | Ashing rate: 5.7 ±2.1 µm/min Non-uniformity: 0.6 ±0.4% |
Ashing rate: 3.8 ±1.6 µm/min Non-uniformity: 0.4 ±0.2% |
| Wafers | 1 | 3 |
| Wafer size | 100 mm | 100 mm |
| Boat position | Center of chamber | Center of chamber |
| Test wafer position | Center of boat | Center of boat |
| Total gas flow rate | 200 sccm | 200 sccm |
| Gas mix ratio | 50% N2 | 50% N2 |
| Chamber pressure | 1.3 mbar | 1.3 mbar |
| Power | 200 W | 200 W |
| Test processing time | Tested parameter | Tested parameter |
| Test average temperature | 33°C | 33°C |
Plasma Asher 5
Coming soon