Specific Process Knowledge/Lithography/Strip: Difference between revisions
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All substrate sizes seems to follow the same pattern; ashing rate increases with a higher percentage nitrogen in the gas mix and also with a higher chamber pressure. The total gas flow has only little influence on the ashing rate, but slightly favors the lower flow rate of 200 sccm, similar to previous experiment results. | All substrate sizes seems to follow the same pattern; ashing rate increases with a higher percentage nitrogen in the gas mix and also with a higher chamber pressure. The total gas flow has only little influence on the ashing rate, but slightly favors the lower flow rate of 200 sccm, similar to previous experiment results. | ||
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| | Investigating the influence of the process parameters, it is clear that the gas mix and the chamber pressure has a sig nificant inpact on the ashing rate, while the gas flow has only little effect: | ||
| | <gallery widths=320px class="center"> | ||
| | File:ParamEffect_100_mm_v1.png|Process parameter influence for 100 mm processing | ||
File:ParamEffect_150_mm_v1.png|Process parameter influence for 150 mm processing | |||
File:ParamEffect_200_mm_v1.png|Process parameter influence for 200 mm processing | |||
</gallery> | |||
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