Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium/End point: Difference between revisions
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I was looking at trenches with sizes ranging from 200 nm to 2 µm in width. The masking materials was negative DUV resist: NUV 2300-0.5 of approximately 500 nm. Here process flow can be seen here: [[:File:Process_flow_for_test_wafers xx.pdf]] | I was looking at trenches with sizes ranging from 200 nm to 2 µm in width. The masking materials was negative DUV resist: NUV 2300-0.5 of approximately 500 nm. Here process flow can be seen here: [[:File:Process_flow_for_test_wafers xx.pdf]] | ||
==Etched close to optimal== | |||
==Etched too long== | |||
==Etched too short== | |||
Revision as of 12:36, 18 February 2025
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Made by Berit bghe @ DTU Nanolab
Using the standard Cr etch recipe I was etching through 100 nm Cr on a 150 mm wafer it an etch load of 50%
I recorded the end point signal and tried three different stopping times to figure out when to stop the etch. I want to find out how I can use the end point signal to get the best etch result; Etch though - also in the small patterns without too much over etch.
I was looking at trenches with sizes ranging from 200 nm to 2 µm in width. The masking materials was negative DUV resist: NUV 2300-0.5 of approximately 500 nm. Here process flow can be seen here: File:Process_flow_for_test_wafers xx.pdf