Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions

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Line 8: Line 8:
!nano1.4
!nano1.4
!nano1.41
!nano1.41
!nano1.42
!nano1.43
|-
|-
!C<sub>4</sub>F<sub>8</sub> (sccm)
!C<sub>4</sub>F<sub>8</sub> (sccm)
Line 14: Line 16:
|52
|52
|52
|52
|75
|75
|75
|75
|75
|75
Line 19: Line 23:
|-
|-
!SF<sub>6</sub> (sccm)
!SF<sub>6</sub> (sccm)
|38
|38
|38
|38
|38
|38
Line 28: Line 34:
|-
|-
!O<sub>2</sub> (sccm)
!O<sub>2</sub> (sccm)
|0
|0
|0
|0
|0
|0
Line 41: Line 49:
|800 (forward)
|800 (forward)
|600 (forward)
|600 (forward)
|800 (forward)
|800 (forward)
|800 (forward)
|800 (forward)
|800 (forward)
|800 (forward)
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|50
|50
|75
|75
|40
|30
|-
|-
! Pressure (mtorr)
! Pressure (mtorr)
|4
|4
|4
|4
|4
|4
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| -10
| -10
| -10
| -10
| -20
| -20
| -20
| -20
| -20
| -20
|-
|-
! Process time (s)
! Process time (s)
|120
|120
|120
|120
|120
|120
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|-
|-
! Nominal line width
! Nominal line width
! colspan="7" align="center"| Etched depths (nm)
! colspan="9" align="center"| Etched depths (nm)
|-
|-
! 30 nm
! 30 nm
|
|
|
|
|
|
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|-
|-
!60 nm
!60 nm
|
|
|
|
|
|
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|-
|-
!90 nm
!90 nm
|
|
|
|
|
|
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|-
|-
!120 nm
!120 nm
|
|
|
|
|
|
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|-
|-
!150 nm
!150 nm
|
|
|
|
|
|
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|-
|-
! Nominal line width
! Nominal line width
! colspan="7" align="center"| Etch rates in trenches (nm/min)
! colspan="9" align="center"| Etch rates in trenches (nm/min)
|-
|-
!30 nm
!30 nm
|
|
|
|
|
|
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|-
|-
!60 nm
!60 nm
|
|
|
|
|
|
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|-
|-
!90 nm
!90 nm
|
|
|
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|-
|-
!120 nm
!120 nm
|
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|-
|-
!150 nm
!150 nm
|
|
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|-
|-
|
|
! colspan="7" align="center"| Etch rates in zep resist (nm/min)
! colspan="9" align="center"| Etch rates in zep resist (nm/min)
|-
|-
! One point on wafer
! One point on wafer
|
|
|
|
|
|
Line 197: Line 237:
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano143|Images]]
|-
|-
|}
|}

Revision as of 08:18, 3 May 2011

Recipe nano1.0 nano1.1 nano1.2 nano1.3 nano1.21 nano1.4 nano1.41 nano1.42 nano1.43
C4F8 (sccm) 52 52 52 52 75 75 75 75 75
SF6 (sccm) 38 38 38 38 38 38 38 38 38
O2 (sccm) 0 0 0 0 0 0 0 0 0
Coil power (W) 800 (forward) 600 (forward) 800 (forward) 600 (forward) 800 (forward) 800 (forward) 800 (forward) 800 (forward) 800 (forward)
Platen power (W) 50 50 50 40 50 50 75 40 30
Pressure (mtorr) 4 4 4 4 4 4 4 4 4
Temperature (degs C) 10 10 -10 -10 -10 -20 -20 -20 -20
Process time (s) 120 120 120 120 120 120 120 120 120
Nominal line width Etched depths (nm)
30 nm
60 nm
90 nm
120 nm
150 nm
Nominal line width Etch rates in trenches (nm/min)
30 nm
60 nm
90 nm
120 nm
150 nm
Etch rates in zep resist (nm/min)
One point on wafer
Images Images Images Images Images Images Images Images Images Images

The nanoetch

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