Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions
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!nano1.4 | !nano1.4 | ||
!nano1.41 | !nano1.41 | ||
!nano1.42 | |||
!nano1.43 | |||
|- | |- | ||
!C<sub>4</sub>F<sub>8</sub> (sccm) | !C<sub>4</sub>F<sub>8</sub> (sccm) | ||
| Line 14: | Line 16: | ||
|52 | |52 | ||
|52 | |52 | ||
|75 | |||
|75 | |||
|75 | |75 | ||
|75 | |75 | ||
| Line 19: | Line 23: | ||
|- | |- | ||
!SF<sub>6</sub> (sccm) | !SF<sub>6</sub> (sccm) | ||
|38 | |||
|38 | |||
|38 | |38 | ||
|38 | |38 | ||
| Line 28: | Line 34: | ||
|- | |- | ||
!O<sub>2</sub> (sccm) | !O<sub>2</sub> (sccm) | ||
|0 | |||
|0 | |||
|0 | |0 | ||
|0 | |0 | ||
| Line 41: | Line 49: | ||
|800 (forward) | |800 (forward) | ||
|600 (forward) | |600 (forward) | ||
|800 (forward) | |||
|800 (forward) | |||
|800 (forward) | |800 (forward) | ||
|800 (forward) | |800 (forward) | ||
| Line 53: | Line 63: | ||
|50 | |50 | ||
|75 | |75 | ||
|40 | |||
|30 | |||
|- | |- | ||
! Pressure (mtorr) | ! Pressure (mtorr) | ||
|4 | |||
|4 | |||
|4 | |4 | ||
|4 | |4 | ||
| Line 69: | Line 83: | ||
| -10 | | -10 | ||
| -10 | | -10 | ||
| -20 | |||
| -20 | |||
| -20 | | -20 | ||
| -20 | | -20 | ||
|- | |- | ||
! Process time (s) | ! Process time (s) | ||
|120 | |||
|120 | |||
|120 | |120 | ||
|120 | |120 | ||
| Line 82: | Line 100: | ||
|- | |- | ||
! Nominal line width | ! Nominal line width | ||
! colspan=" | ! colspan="9" align="center"| Etched depths (nm) | ||
|- | |- | ||
! 30 nm | ! 30 nm | ||
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!60 nm | !60 nm | ||
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!90 nm | !90 nm | ||
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!120 nm | !120 nm | ||
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| Line 121: | Line 147: | ||
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!150 nm | !150 nm | ||
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| Line 130: | Line 158: | ||
|- | |- | ||
! Nominal line width | ! Nominal line width | ||
! colspan=" | ! colspan="9" align="center"| Etch rates in trenches (nm/min) | ||
|- | |- | ||
!30 nm | !30 nm | ||
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| Line 142: | Line 172: | ||
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!60 nm | !60 nm | ||
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!90 nm | !90 nm | ||
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| Line 160: | Line 194: | ||
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!120 nm | !120 nm | ||
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| Line 169: | Line 205: | ||
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!150 nm | !150 nm | ||
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| Line 178: | Line 216: | ||
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! colspan=" | ! colspan="9" align="center"| Etch rates in zep resist (nm/min) | ||
|- | |- | ||
! One point on wafer | ! One point on wafer | ||
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|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14|Images]] | |[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14|Images]] | ||
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141|Images]] | |[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141|Images]] | ||
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142|Images]] | |||
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano143|Images]] | |||
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