Specific Process Knowledge/Lithography/Strip: Difference between revisions

@@ Line 370: / Line 370: @@
 The ashing rate is related to the power used during processing. Higher power increases ashing rate.
-'''Single substrate:'''<br>
+{| class="wikitable"
-Test using a single 100 mm wafer in the center of the process chamber shows that a power of 1000 W gives the highest ashing rate.
+|-
+! Test setup !! Single substrate
+|-
+! scope=row| Test results
+| Ashing rate follows temperature
+|-
+! scope=row| Wafers
+| 1
+|-
+! scope=row| Wafer size
+| 100 mm
+|-
+! scope=row| Boat position
+| Center of chamber
+|-
+! scope=row| Test wafer position
+| Center of boat
+|-
+! scope=row| Total gas flow rate
+| 200 sccm
+|-
+! scope=row| Gas mix ratio
+| 30% N<sub>2</sub>
+|-
+! scope=row| Chamber pressure
+| 1.3 mbar
+|-
+! scope=row| Power
+| 1000 W
+|-
+! scope=row| Test processing time
+| 2 minutes
+|-
+! scope=row| Test average temperature
+| Tested parameter
+|}
-Total gas flow rate: 200 sccm<br>
-Gas mix ratio: 30% nitrogen<br>
-Chamber pressure: 1.3 mbar<br>
-Power: tested parameter<br>
-Processing time: 2 minutes<br>
-Temperature (average): 43°C
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