Specific Process Knowledge/Lithography/Strip: Difference between revisions

← Older edit Newer edit →

VisualWikitext

@@ Line 280: / Line 280: @@
 Please note that the ashing rate for a full boat is approximately ten times slower, than the processing time for a single substrate.
-'''Single substrate:'''<br>
+{| class="wikitable"
-Test using a single 100 mm wafer in the center of the process chamber shows that 1.3 mbar gives the highest ashing rate.
+|-
+! Test setup !! Single substrate !! Full boat
+|-
+! scope=row| Test results
+| Highest ashing rate at 1.3 mbar || Highest ashing rate at 1.4 mbar
+|-
+! scope=row| Wafers
+| 1 || 25
+|-
+! scope=row| Wafer size
+| 100 mm || 100 mm
+|-
+! scope=row| Boat position
+| Center of chamber || Center of chamber
+|-
+! scope=row| Test wafer position
+| Center of boat || Center of boat
+|-
+! scope=row| Total gas flow rate
+| 150 || 200
+|-
+! scope=row| Gas mix ratio
+| 30% N<sub>2</sub> || 30% N<sub>2</sub>
+|-
+! scope=row| Chamber pressure
+| Tested parameter || Tested parameter
+|-
+! scope=row| Power
+| 1000 W || 1000 W
+|-
+! scope=row| Test processing time
+| 2 minutes || 10 minutes
+|-
+! scope=row| Test average temperature
+| 43°C || 55°C
+|}
-Total gas flow rate: 500 sccm<br>
-Gas mix ratio: 30% nitrogen<br>
-Chamber pressure: tested parameter<br>
-Power: 1000 W<br>
-Processing time: 2 minutes<br>
-Temperature (average): 43°C
-<br clear="all" />
-'''Full boat:'''<br>
-Test using a boat of 25 100 mm wafers in the center of the process chamber shows that 1.4 mbar gives the highest ashing rate.
-Total gas flow rate: 200 sccm<br>
-Gas mix ratio: 30% nitrogen<br>
-Chamber pressure: tested parameter<br>
-Power: 1000 W<br>
-Processing time: 10 minutes<br>
-Temperature (average): 43°C
 <br clear="all" />