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Specific Process Knowledge/Lithography/Strip: Difference between revisions

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'''Single substrate:'''<br>
'''Single substrate:'''<br>
Test using a single 100 mm wafer in the center of the process chamber shows that 30-80% nitrogen gives the highest ashing rate.
Result: 30-80% nitrogen gives the highest ashing rate.


Wafers: 1<br>
Size: 100 mm<br>
Boat position: Center of chamber<br>
Test wafer position: middle of boat<br>
Total gas flow rate: 500 sccm<br>
Total gas flow rate: 500 sccm<br>
Gas mix ratio: tested parameter<br>
Gas mix ratio: tested parameter<br>
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Test using a boat of 25 100 mm wafers in the center of the process chamber shows that 50-70% nitrogen gives the highest ashing rate.
Test using a boat of 25 100 mm wafers in the center of the process chamber shows that 50-70% nitrogen gives the highest ashing rate.


Wafers: 25<br>
Size: 100 mm<br>
Boat position: Center of chamber<br>
Test wafer position: middle of boat<br>
Total gas flow rate: 200 sccm<br>
Total gas flow rate: 200 sccm<br>
Gas mix ratio: tested parameter<br>
Gas mix ratio: tested parameter<br>