Jump to content

Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions

← Older editNewer edit →
VisualWikitext
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,318 edits
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,318 edits
Line 597: Line 597:
|}
|}


TEST:
<gallery caption=" C12508: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:11.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px">
[[File:C12332_06.jpg|400px]]
File:C12508_03__14.jpg
File:C12508_03__02.jpg
File:C12508_03__04.jpg
File:C12508_03__06.jpg
File:C12508_03__07.jpg
File:C12508_03__09.jpg
File:C12508_03__12.jpg
</gallery>
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2_Etch/Cr_mask"