Specific Process Knowledge/Lithography/Strip: Difference between revisions
| Line 314: | Line 314: | ||
==Process power for plasma asher 4 & 5== | ==Process power for plasma asher 4 & 5== | ||
[[File:PA_power_v3.png|320px|thumb|Ashing rate as function of microwave power.|right]] | [[File:PA_power_v3.png|320px|thumb|Ashing rate as function of microwave power.|right]] | ||
The ashing rate is related to the power used during processing. Higher power | The ashing rate is related to the power used during processing. Higher power increases ashing rate. | ||
'''Single substrate:'''<br> | '''Single substrate:'''<br> | ||