Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions

Revision as of 07:24, 2 May 2011

Recipe	nano1.0	nano1.1	nano1.2	nano1.3	nano1.21	nano1.4	nano1.41
C₄F₈ (sccm)	52	52	52	52	75	75	75
SF₆ (sccm)	38	38	38	38	38	38	38
O₂ (sccm)	0	0	0	0	0	0	0
Coil power (W)	800 (forward)	600 (forward)	800 (forward)	600 (forward)	800 (forward)	800 (forward)	800 (forward)
Platen power (W)	50	50	50	40	50	50	75
Pressure (mtorr)	4	4	4	4	4	4	4
Temperature (degs C)	10	10	-10	-10	-10	-20	-20
Process time (s)	120	120	120	120	120	120	120
Nominal line width	Etched depths (nm)
30 nm
60 nm
90 nm
120 nm
150 nm
Nominal line width	Etch rates in trenches (nm/min)
30 nm
60 nm
90 nm
120 nm
150 nm
	Etch rates in zep resist (nm/min)
One point on wafer
Images	Images	Images	Images	Images	Images	Images	Images

The nanoetch

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 |[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14|Images]]
 |[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141|Images]]
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