Specific Process Knowledge/Lithography/Strip: Difference between revisions
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The ashing rate is related to the power used during processing. Higher power gives higher ashing rate. | The ashing rate is related to the power used during processing. Higher power gives higher ashing rate. | ||
'''Single substrate:'''<br> | |||
Test using a single 100 mm wafer in the center of the process chamber shows that a power of 1000 W gives the highest ashing rate. | Test using a single 100 mm wafer in the center of the process chamber shows that a power of 1000 W gives the highest ashing rate. | ||
Total gas flow rate: 200 sccm<br> | Total gas flow rate: 200 sccm<br> | ||
Gas mix ratio: 30% nitrogen<br> | Gas mix ratio: 30% nitrogen<br> | ||
Chamber pressure: 1.3 mbar<br> | Chamber pressure: 1.3 mbar<br> | ||
Power: tested parameter<br> | Power: tested parameter<br> | ||