Specific Process Knowledge/Lithography/Strip: Difference between revisions
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==Process gas flow rate for plasma asher 4 & 5== | ==Process gas flow rate for plasma asher 4 & 5== | ||
[[File: | [[File:PA_flowRate_v4.png|320px|thumb|Ashing rate as function of total gas flow when processing a single substrate and when processing a full boat with 25 wafers.|right]] | ||
The ashing rate is related to the total gas flow rate during processing. | The ashing rate is related to the total gas flow rate during processing. | ||
Test using a single 100 mm wafer in the center of the process chamber shows that | Testing found that 200 sccm gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates. | ||
'''Single substrate:'''<br> | |||
Test using a single 100 mm wafer in the center of the process chamber shows that 200 sccm gives the highest ashing rate. | |||
Total gas flow rate: tested parameter<br> | Total gas flow rate: tested parameter<br> | ||
Gas mix ratio: 30% nitrogen<br> | Gas mix ratio: 30% nitrogen<br> | ||
Chamber pressure: 1.3 mbar<br> | Chamber pressure: 1.3 mbar<br> | ||
Power: 1000 W<br> | Power: 1000 W<br> | ||
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'''Full boat:'''<br> | |||
Test using a boat of 25 100 mm wafers in the center of the process chamber shows that | Test using a boat of 25 100 mm wafers in the center of the process chamber shows that 200 sccm gives the highest ashing rate. | ||
Total gas flow rate: tested parameter<br> | Total gas flow rate: tested parameter<br> | ||
Gas mix ratio: 30% nitrogen<br> | Gas mix ratio: 30% nitrogen<br> | ||
Chamber pressure: 1.3 mbar<br> | Chamber pressure: 1.3 mbar<br> | ||
Power: 1000 W<br> | Power: 1000 W<br> | ||
Processing time: | Processing time: 10 minutes<br> | ||
Temperature (average): 43°C | Temperature (average): 43°C | ||
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