Specific Process Knowledge/Lithography/Strip: Difference between revisions
| Line 252: | Line 252: | ||
==Process chamber pressure for plasma asher 4 & 5== | ==Process chamber pressure for plasma asher 4 & 5== | ||
[[File: | [[File:PA_chamber_pressure_v3.png|320px|thumb|Ashing rate as function of chamber pressure when processing a single substrate and when processing a full boat with 25 substrates.|right]] | ||
The ashing rate is related to the chamber pressure during processing. | The ashing rate is related to the chamber pressure during processing. | ||
Testing found that 1.3 mbar gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates. | |||
'''Single substrate:'''<br> | |||
Total gas flow rate: | Test using a single 100 mm wafer in the center of the process chamber shows that 1.3 mbar gives the highest ashing rate. | ||
Gas mix ratio: 30% | |||
Total gas flow rate: 500 sccm<br> | |||
Gas mix ratio: 30% N2<br> | |||
Chamber pressure: tested parameter<br> | Chamber pressure: tested parameter<br> | ||
Power: 1000 W<br> | Power: 1000 W<br> | ||
Processing time: 2 minutes<br> | Processing time: 2 minutes<br> | ||
Temperature (average): 43°C | |||
<br clear="all" /> | |||
'''Full boat:'''<br> | |||
Test using a boat of 25 100 mm wafers in the center of the process chamber shows that 1.4 mbar gives the highest ashing rate. | |||
Total gas flow rate: 200 sccm<br> | |||
Gas mix ratio: 30% N2<br> | |||
Chamber pressure: tested parameter<br> | |||
Power: 1000 W<br> | |||
Processing time: 5 minutes<br> | |||
Temperature (average): 43°C | Temperature (average): 43°C | ||
<br clear="all" /> | <br clear="all" /> | ||