Specific Process Knowledge/Lithography/Strip: Difference between revisions
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==Process gas flow rate for plasma asher 4 & 5== | ==Process gas flow rate for plasma asher 4 & 5== | ||
[[File:PA_flowRate_v3.png|320px|thumb|Ashing rate as function of total gas flow | [[File:PA_flowRate_v3.png|320px|thumb|Ashing rate as function of total gas flow when processing a single 100 mm wafer.|right]] | ||
The ashing rate is related to the total gas flow rate during processing. | The ashing rate is related to the total gas flow rate during processing. | ||
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Power: 1000 W<br> | Power: 1000 W<br> | ||
Processing time: 2 minutes<br> | Processing time: 2 minutes<br> | ||
Temperature (average): 43°C | |||
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[[File:PA_flowRateFullBoat_v1.png|320px|thumb|Ashing rate as function of total gas flow when processing a full boat of 25 100 mm wafers.|right]] | |||
Test using a boat of 25 100 mm wafers in the center of the process chamber shows that 80% nitrogen gives the highest ashing rate. | |||
<b>Test parameters:</b><br> | |||
Total gas flow rate: 200 sccm<br> | |||
Gas mix ratio: tested parameter<br> | |||
DSC: 1.3 mbar<br> | |||
Chamber pressure: 1.3 mbar<br> | |||
Power: 1000 W<br> | |||
Processing time: 5 minutes<br> | |||
Temperature (average): 43°C | Temperature (average): 43°C | ||
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