Specific Process Knowledge/Lithography/Strip: Difference between revisions
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*Etching of SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, Si | *Etching of SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, Si | ||
*Removal of polyimide layers | *Removal of polyimide layers | ||
'''Typical stripping parameters''' | |||
*Resist: 1.5 µm AZ 5214E | |||
*Substrate: 100 mm Si | |||
*O<sub>2</sub>: 140 sccm | |||
*N<sub>2</sub>: 60 sccm | |||
*Pressure (DSC): 1.3 mbar | |||
*Power: 1000 W | |||
*Time (single wafer): 20 minutes | |||
*Time (full boat): 90 minutes | |||