Specific Process Knowledge/Lithography/Strip: Difference between revisions
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==Process power for plasma asher 4 & 5== | ==Process power for plasma asher 4 & 5== | ||
[[File:PA_power_v1.png|320px|thumb|Ashing rate as function of total gas flow rate.|right]] | |||
The ashing rate is related to the power used during processing. Higher power gives higher ashing rate. | The ashing rate is related to the power used during processing. Higher power gives higher ashing rate. | ||
Test using a single 100 mm wafer in the center of the process chamber shows that a power of 1000 W gives the highest ashing rate. | Test using a single 100 mm wafer in the center of the process chamber shows that a power of 1000 W gives the highest ashing rate. | ||
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Temperature (average): 43°C | Temperature (average): 43°C | ||
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==Process temperature for plasma asher 4 & 5== | ==Process temperature for plasma asher 4 & 5== | ||