Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions

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LPCVD TEOS oxide

DTU Nanolab has one LPCVD (Low Pressure Chemical Vapor Deposition) TEOS furnace. The furnace is a Tempress horizontal furnace (installed in 1995). The process is a batch process, where TEOS oxide can be deposited on up to 15 4 inch wafers at a time.

TEOS is tetraethoxysilane, and TEOS oxide is a silicon dioxide based on this reactive chemical that during deposition condenses on the sample surface. The deposition takes place at a temperature of 712-720 ^oC (there is a small temperature gradient over the furnace tube).

It is possible to anneal the TEOS oxide layer to increase the density and thus improve the electrical properties as well as the chemical resistance. The electrical characteristics may also be improved by the addition of O₂ during the deposition process.

The LPCVD TEOS oxide has an excellent step coverage and is very good for trench filling, however very small and deep trenches will be challenging. The film thickness is very uniform over each wafer.

More information about the TEOS oxide deposition process can be found here:

The user manual(s), quality control procedure(s) and results, technical information and contact information can be found in LabManager:

LPCVD TEOS furnace

Furnace computer manual

Manual for the furnace computer to the A, B, C and E stack furnaces

The A, B, C and E stack furnaces can be controlled either from a touch screen by each furnace or from a furnace computer. The user manual for the furnace computer can be found here:

Manual for furnace computers for the A, B, C and E stack furnaces

Process Knowledge

Please take a look at the process side for deposition of TEOS oxide:

Deposition of TEOS using LPCVD

Overview of the performance of the LPCVD TEOS furnace and some process related parameters

Purpose		Deposition of TEOS - Silicon dioxide based on tetraethoxysilane
Performance	Film thickness	0 nm - 2000 nm
	Step coverage	Good
	Film quality	Dense film Few defects
Process parameter range	Process Temperature	712-720 ^oC
	Process pressure	190 mTorr
	Gas flows	TEOS: 50 sccm O₂: 0 sccm
Substrates	Batch size	1-15 4" wafers per run Deposition on both sides of the substrate
Substrates	Substrate material allowed	Silicon wafers (only clean wafers and RCA cleaned) with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) from furnaces in stack A or B in cleanroom 2 Quartz wafers (RCA cleaned) Silicon carbide sample(RCA cleaned)

Rules for storage and RCA cleaning of wafers to the B3 furnace

Storage and cleaning of wafer to the B3 furnace

@@ Line 7: / Line 7: @@
 [[Category: Furnaces|LPCVD TEOS]]
-==LPCVD (Low Pressure Chemical Vapor Deposition) TEOS==
+==LPCVD TEOS oxide==
 [[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 Furnace LPCVD TEOS. Positioned in cleanroom B-1]]
-DTU Nanolab has one LPCVD TEOS furnace (installed in 1995). The furnace is a Tempress horizontal furnace. The process is a batch process, where TEOS can be deposited on up to 15 wafer at a time.
+DTU Nanolab has one LPCVD (Low Pressure Chemical Vapor Deposition) TEOS furnace. The furnace is a Tempress horizontal furnace (installed in 1995). The process is a batch process, where TEOS oxide can be deposited on up to 15 4 inch wafers at a time.
-TEOS is a silicon dioxide based on tetraethoxysilane. The reactive gas is TEOS, and the deposition takes place at a temperature of 712-720 <sup>o</sup>C (temperature variation over the furnace tube). It is possible to anneal the TEOS layer to improve the electrical properties as well as chemical resistance. The electrical characteristics may also be improved by the addition of O<sub>2</sub> during the deposition process.
+TEOS is tetraethoxysilane, and TEOS oxide is a silicon dioxide based on this reactive chemical that during deposition condenses on the sample surface. The deposition takes place at a temperature of 712-720 <sup>o</sup>C (there is a small temperature gradient over the furnace tube).
+It is possible to anneal the TEOS oxide layer to increase the density and thus improve the electrical properties as well as the chemical resistance. The electrical characteristics may also be improved by the addition of O<sub>2</sub> during the deposition process.
+The LPCVD TEOS oxide has an excellent step coverage and is very good for trench filling, however very small and deep trenches will be challenging. The film thickness is very uniform over each wafer.
+More information about the TEOS oxide deposition process can be found here:
-The LPCVD TEOS has an excellent step coverage and is very good for trench filling. The film thickness is very uniform over each wafer.
@@ Line 22: / Line 27: @@
 '''[https://labmanager.dtu.dk/d4Show.php?id=1926 Furnace computer manual]'''
 == Manual for the furnace computer to the A, B, C and E stack furnaces ==