Specific Process Knowledge/Lithography/Strip: Difference between revisions

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 [[image:2017-03-15 13.12.45.jpg|350x350px|thumb|Plasma Asher 3: Descum is placed A-5]]
-The Plasma Asher 3: Descum dedicated for resist descum i.e. removal of remains resist traces after development. It has a small chamber, so you can only load one 4 inch substrate ad time or few smaller pieces.
+The Plasma Asher 3: Descum dedicated for resist descum i.e. removal of remains resist traces after development. It has a small chamber, so you can only load a single 100 mm substrate or a few smaller pieces.
 In this machine, only O2 and N2 gases are used for processes.
-The typical process parameters when operating the equipment:
+<b>Typical process parameters when operating the equipment:</b><br>
+Process: Photoresist descum<br>
-*Photeresist descum
+Pressure: 0.2-0.8 mbar<br>
-Pressure:	0.2 - 0.8mbar
+Gas: O<sub>2</sub><br>
-Gas:	O2
+Power: 50-100%<br>
-Power:	50% - 100%
+Time:1 -10 minutes (depending on photoresist type and thickness)<br>
-Time:	1 -10 min., depending on photoresist type and thickness
 The other materials have not been tested yet.
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 ===Process Information===
-*[[Specific Process Knowledge/Lithography/Descum|Descum]]
+Detailed information about descum processing on Plasma asher 3: Descum can be found [[Specific Process Knowledge/Lithography/Descum|here]].
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