Specific Process Knowledge/Lithography/Strip: Difference between revisions
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==Process gas ratio== | ==Process gas ratio for plasma asher 4 & 5== | ||
[[File:PA_gas_mix_v1.png|320px|thumb|Ashing rate as function of gas mix ratio.|right]] | [[File:PA_gas_mix_v1.png|320px|thumb|Ashing rate as function of gas mix ratio.|right]] | ||
The ashing rate is related to the gas mix, usually expressed as percentage of nitrogen of the total amount of gas. Test using a single 100 mm wafer in the center of the process chamber shows that 30-80% nitrogen gives the highest ashing rate. | The ashing rate is related to the gas mix, usually expressed as percentage of nitrogen of the total amount of gas. Test using a single 100 mm wafer in the center of the process chamber shows that 30-80% nitrogen gives the highest ashing rate. | ||