Specific Process Knowledge/Lithography/Strip: Difference between revisions
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==Process power== | ==Process power== | ||
<!--[[File:PA_flowRate_v1.png|320px|thumb|Ashing rate as function of total gas flow rate.|right]]--> | |||
The ashing rate is related to the power used during processing. Higher power gives higher ashing rate. | |||
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Test using a single 100 mm wafer in the center of the process chamber shows that a power of 1000 W gives the highest ashing rate. | |||
<b>Test parameters:</b><br> | |||
Total gas flow rate: 200 sccm<br> | |||
Gas mix ratio: 30% nitrogen<br> | |||
DSC: 1.3 mbar<br> | |||
Chamber pressure: 1.3 mbar<br> | |||
Power: set to tested power<br> | |||
Processing time: 2 minutes<br> | |||
Temperature (average): 43°C | |||
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==Plasma Asher 1== | ==Plasma Asher 1== | ||