Specific Process Knowledge/Thin film deposition/Deposition of Silicon Carbide: Difference between revisions

From LabAdviser
← Older edit
VisualWikitext
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
3,918 edits
No edit summary
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
3,918 edits
No edit summary
 
Line 5: Line 5:
== Deposition of Silicon Carbide ==
== Deposition of Silicon Carbide ==


Silicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using [[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]]:
Silicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using [[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]] (Src5-RF):


*[[/Deposition of SiC in Sputter-System Lesker|Deposition of SiC in Sputter-System (Lesker)]]
*[[/Deposition of SiC in Sputter-System Lesker|Deposition of SiC in Sputter-System (Lesker)]]

Latest revision as of 13:44, 9 January 2025

Feedback to this page: click here


Deposition of Silicon Carbide

Silicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using Sputter-System (Lesker) (Src5-RF):

Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Carbide&oldid=50418"