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| =Plasma Asher 1= | | =Plasma Asher 1= |
| [[File:Descum Results aug 2019.png|640px|thumb|right|Descum results plasma asher 1. September 2019]]
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| <span style="color:red">This tool has been decomissioned 2024-12-02.</span> | | <span style="color:red">This tool has been decommissioned 2024-12-02.</span> |
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| The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=55 LabManager] - '''requires login'''
| | ==[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool]]== |
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| Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.
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| '''Recipe 1:'''<br>
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| Note: Plasma asher was cold before use
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| *O2 flow: 70 ml/min
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| *N2 flow: 70 ml/min
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| *Power: 150 W
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| {| {{table}}
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| | align="center" |
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| {|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
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| |- style="background:LightGrey"
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| |'''Ashing time (min)'''|| 1|| 2 || 5 || 7 || 10 || 10
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| |'''Etched Thickness (nm)'''|| 14.2 || 16.3 || 47.6 || 123.2 || 854.3 || 862.1
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| |-
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| |}
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| |}
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| '''Recipe 2:'''<br>
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| Note: Plasma asher was cold before use
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| *O2 flow: 500 ml/min
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| *N2 flow: 0 ml/min
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| *Power: 500 W
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| {| {{table}}
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| | align="center" |
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| {|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
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| |- style="background:LightGrey"
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| |'''Ashing time (min)'''|| 1|| 2 || 5 || 7 || 10 || 10
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| |'''Etched Thickness (nm)'''|| - || 8.1 || 32.9 || 271.1 || 495.6 || 446.2
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| |-
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| |}
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| |}
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| <br clear="all" />
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| ==Descum tests on UV resists==
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| ''Conny Hjort & Jesper Hanberg, September 2021''
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| [[Image:PA1_descum.jpg|640px|thumb|Descum results plasma asher 1. August 2021]]
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| Descum of different resists, AZ5214E, AZ701 MiR and AZ2020 nLOF, on a single 100mm wafer was tested. Wafer was placed vertically in the middle of glass carrier.
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| '''Recipe settings:'''<br>
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| Note: plasma Asher was cold before use.
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| *O2 flow: 70 ml/min
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| *N2 flow: 70 ml/min
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| Power: 150 W
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| Minor temperature rise during processing was observed, but not more than 5 degrees. Starting chamber pressure was around 0.5 mbar.
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| '''1,5 um AZ5214E resist:'''
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| {| {{table}}
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| | align="center" |
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| {|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
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| |- style="background:LightGrey"
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| |'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
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| |-
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| |'''Etched Thickness (nm)'''|| 6,28 || 102,99 || 76,92 || N/A || N/A
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| |-
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| |}
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| |}
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| '''1,5 um AZ5214E resist placed horizontally in the carrier:'''
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| {| {{table}}
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| | align="center" |
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| {|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
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| |- style="background:LightGrey"
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| |'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
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| |-
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| |'''Etched Thickness (nm)'''|| 63,03 || 143,32 || 304,29 || 372,59 || N/A
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| |-
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| |}
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| |}
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| '''1,5 um AZ701MiR resist:'''
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| {| {{table}}
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| | align="center" |
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| {|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
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| |- style="background:LightGrey"
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| |'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
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| |'''Etched Thickness (nm)'''|| 268,88 || 199,54 || 219,03 || 200,86 || 292,15
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| |-
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| |}
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| |}
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| '''1,5 um AZ 2020nLOF resist:'''
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| {| {{table}}
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| | align="center" |
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| {|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
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| |- style="background:LightGrey"
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| |'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
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| |'''Etched Thickness (nm)'''|| 1,68 || 76,51 || 169,72 || 481,96 || 272,59
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| |-
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| |}
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| |}
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| <br clear="all" /> | | <br clear="all" /> |
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