Specific Process Knowledge/Etch/DryEtchProcessing/Comparison: Difference between revisions
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| style="background:WhiteSmoke; color:black"| Silicon etching of 6" wafers on 6" wafers | | style="background:WhiteSmoke; color:black"| Silicon etching of 6" wafers on 6" wafers | ||
| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides on 6" wafers | | style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides on 6" wafers | ||
| style="background:WhiteSmoke; color:black"| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo | | style="background:WhiteSmoke; color:black"| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo. Please do not use this machine with F-chemistry unless the Dry Etch group has allowed it! | ||
| style="background:WhiteSmoke; color:black"| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates | | style="background:WhiteSmoke; color:black"| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates | ||
| style="background:WhiteSmoke; color:black"| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs | | style="background:WhiteSmoke; color:black"| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs | ||