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{| {{table } }
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Optical_microscope| Optical Micro- scopes]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|SEM (incl. EDX)]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|AFM]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/Profiler|Stylus profiler]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Profiler#Optical_Profiler_(Sensofar_S_Neox)|Optical profiler]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Optical_characterization#Filmtek_4000|Filmtek (reflec- tometer)]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer|Ellip- someter]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Thickness stylus]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/XPS|XPS]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/PL_mapper|PL mapper]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/4-Point_Probe|4-point probe]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Probe_station|Probe station]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/XRD|XRD]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Lifetime_scanner_MDPmap|Life time scanner]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Drop shape analyser]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Hardness_measurement|Hardness tester]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/Particle Scanner Takano|Particle scanner]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|IR-camera
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|III-V ECV-profiler]]
|  width="10" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/MicroSpectroPhotometer (Craic 20/30 PV)|Microspectrophotometer (Craic 20/30 PV)]]
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Breakdown voltage
|||||||||||||||||||||||||||||||||||||||
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|-style="background:#C0C0C0;" align="center"
|align="left"| Carrier density/doping profile
|||||||||||||||||||||||||||||||||||||x||
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|-style="background:#DCDCDC;" align="center"
|align="left"| Charge carrier life time||||||||||||||||||||||||||||x||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| Contact angle hydrophobic/hydrophillic||||||||||||||||||||||||||||||x||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Crystallinity||||||||||||||||||||||||||x||||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| Deposition uniformity||||||||||x||x||x||||||||||||||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Dimensions(in plane)]]||x||x||(x)||(x)||x||||||||||||||||||||||||||||||x
|-
|-style="background:#C0C0C0;" align="center"
|align="left"|[[Specific_Process_Knowledge/Characterization/Topographic_measurement|Dimensions(height)/Topography]]||(x)||(x)||x||x||x||||||||||||||||||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Electrical conductivity||||||||||||||||||||||||x||||||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Element_analysis|Element analysis]]||||x||||||||||||||x||x  4)||||||x  4)||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Stress_measurement|Film stress]]||||||||x||||||||||||||||||x  7)||||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Imaging]]||x||x||x||||x||||||||||||||||||||||||||||||x
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Hardness_measurement|Material Hardness]]||||||||||||||||||||||||||||||||x||||||||
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|-style="background:#C0C0C0;" align="center"
|align="left"| Band gap||||||||||||||x||||x||x||||||||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Particles||x||x||x||||||||||||||||||||||||||||x||||||x
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|-style="background:#C0C0C0;" align="center"
|align="left"| Phase changes||||||||||||||||||||||||||||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Reflectivity||||||||||||x||x||||||x 6)||||||||||||||||||||x
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Refractive index]]||||||||||||x||x||||||||||||||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Resistivity||||||||||||||||||||||x||||||||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| Step coverage||x  1)||x  1)||||||||||||||||||||||||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| Surface roughness||||||x||x||x||||||||||||||||x||||||||||||||
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|-style="background:#C0C0C0;" align="center"
|align="left"| Thermal conductivity||||||||||||||||||||||||||||||||||||||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Thin film thickness]]||x  1)||x  1)||x  2)||x  2)||x  ||x||x||||||x 5)||x  3)||||x||||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| Voids in wafer bonding||x||||||||||||||||||x||||||||||||||||x||||
|-
|-style="background:#DCDCDC;" align="center"
|align="left"| [[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Wafer thickness]]||x  1)||x  1)||||||||||||x||||||||||||||||||||||||
|-
|-style="background:#C0C0C0;" align="center"
|align="left"| Work function||||||||||||||||||x||||||||||||||||||||||
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# Using the cross section method
# Using the cross section method
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