Specific Process Knowledge/Wafer and sample drying: Difference between revisions

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== Process information ==
== Process information ==


Standard process is 120 seconds for 100mm wafers or 180 seconds for 150mm wafers, at 2000 RPM - drying only.
Standard process is:
#Rinse (with DI water) for 60 seconds at 500 RPM
#Dry with nitrogen for 150 seconds at 1800 RPM
#Dry with nitrogen and anti-static purge for 30 seconds at 1800 RPM


''If'' rinsing is used as well, the standard process is 60 seconds of rinse at 500 RPM, followed by 120/180 seconds of drying at 2000 RPM.


<gallery caption="Different places to dry your wafers" widths="275px" heights="225px" perrow="5">  
<gallery caption="Different places to dry your wafers" widths="275px" heights="225px" perrow="5">  

Revision as of 12:05, 30 September 2024

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Drying Comparison Table

Equipment Spin dryer 2 Spin dryer 3 Spin dryer 4 Spin dryer 5 Critical point dryer Ethanol fume dryer N2 guns
Location
  • B-1
  • D-3
  • D-3
  • F-3
  • D-3
  • C-1
  • In fumehoods and at chemical benches
Purpose
  • Drying
  • Drying
  • Drying
  • Drying
  • Rinsing + drying
  • Drying sensitive samples. E.g. with cantilevers
  • Drying sensitive samples. E.g. with cantilevers
  • Drying all kind of samples.
Batch size
  • 1-25 100 mm wafers
  • 1-25 150 mm wafers
  • 1-25 100 mm wafers
  • 1-25 150 mm wafers
  • 1-25 100 mm wafers
  • 1-25 150 mm wafers
  • 1-25 100 mm wafers
  • 1-25 150 mm wafers
  • 1-25 200 mm wafers
  • 1 to 5 wafers per run. Sizes: 2”, 4" or 6"
  • Pieces (up to 10x10mm)
  • 1-25 50 mm wafers
  • 1-25 100 mm wafers
  • Pieces if a suitable carrier is available
  • One sample at a time
Allowed materials
  • Only for RCA cleaned wafers
  • No restrictions
  • No restrictions
  • No restrictions
  • Si,SiO2, Si3N4
  • Quartz and Pyrex
  • InAlP, GaAs
  • SU8
  • No restriction except for polymers
  • No restriction

Spin dryers

A tool used for drying wafers. A single cassette of wafers is placed in a stainless steel rotor. The wafers are centered just off the axis of rotation, and rotated at high RPM so that centrifugal force “locks” the wafers in place.

Some of the tools have DI water connected, and can be used for both rinsing and drying of wafers, while other tools do not and can only be used for drying. All wafers have to be washed in a wetbench cleaning station before going into the spin dryer, regardless of using the rinse function or not.


The user manual, technical information, and contact information can be found in LabManager: Spin dryer 2 Spin dryer 3


Process information

Standard process is:

  1. Rinse (with DI water) for 60 seconds at 500 RPM
  2. Dry with nitrogen for 150 seconds at 1800 RPM
  3. Dry with nitrogen and anti-static purge for 30 seconds at 1800 RPM



Ethanol fume dryer

If your wafers are fragile or having thin membranes, cantilevers or suspended bridges that risk to stick or adhere to the surface it can be a good idea to dry your wafers in the ethanol fume dryer. Ethanol is heated to 70°C and your wafers are placed in the fumes of Ethanol which will make the water evaporate from the surface. The Ethanol dryer is placed on a shelf or trolly in D-3 and looks like a US bath. Describtion on how to use is written on the bath.



Nitrogen guns

Nitrogen guns are valuable for drying small substrate pieces or samples that otherwise cannot go into the outer drying tools.