Specific Process Knowledge/Wafer and sample drying: Difference between revisions
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== Process information == | == Process information == | ||
Standard process is | Standard process is: | ||
#Rinse (with DI water) for 60 seconds at 500 RPM | |||
#Dry with nitrogen for 150 seconds at 1800 RPM | |||
#Dry with nitrogen and anti-static purge for 30 seconds at 1800 RPM | |||
<gallery caption="Different places to dry your wafers" widths="275px" heights="225px" perrow="5"> | <gallery caption="Different places to dry your wafers" widths="275px" heights="225px" perrow="5"> | ||