Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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|Repeating the 1200W/100W recipes at 14 min but without the EM coils. For this recipe the uniformity over the wafer improved from removing the EM coils, so no need for those and now the recipe could run 14 min without damaging the hardware. The profile looked as before. After removing the Cr I looked from the top and with a tilted view and saw the the sidewall roughness was very bad. | |Repeating the 1200W/100W recipes at 14 min but without the EM coils. For this recipe the uniformity over the wafer improved from removing the EM coils, so no need for those and now the recipe could run 14 min without damaging the hardware. The profile looked as before. After removing the Cr I looked from the top and with a tilted view and saw the the sidewall roughness was very bad. | ||
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W | <gallery perrow="7" widths="200px" heights="150px" caption="this one ! SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W"> | ||
File:C10184_01.jpg | File:C10184_01.jpg | ||
File:C10184_05.jpg | File:C10184_05.jpg | ||