Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions
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!nano1.2 | !nano1.2 | ||
!nano1.3 | !nano1.3 | ||
!nano1.21 | |||
! | |||
|- | |- | ||
!C<sub>4</sub>F<sub>8</sub> (sccm) | !C<sub>4</sub>F<sub>8</sub> (sccm) | ||
Line 17: | Line 12: | ||
|52 | |52 | ||
|52 | |52 | ||
|75 | |||
|- | |- | ||
!SF<sub>6</sub> (sccm) | !SF<sub>6</sub> (sccm) | ||
|38 | |||
|38 | |38 | ||
|38 | |38 | ||
Line 25: | Line 22: | ||
|- | |- | ||
!O<sub>2</sub> (sccm) | !O<sub>2</sub> (sccm) | ||
|0 | |||
|0 | |0 | ||
|0 | |0 | ||
Line 35: | Line 33: | ||
|800 (forward) | |800 (forward) | ||
|600 (forward) | |600 (forward) | ||
|800 (forward) | |||
|- | |- | ||
!Platen power (W) | !Platen power (W) | ||
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|50 | |50 | ||
|40 | |40 | ||
|50 | |||
|- | |- | ||
! Pressure (mtorr) | ! Pressure (mtorr) | ||
|4 | |||
|4 | |4 | ||
|4 | |4 | ||
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| 10 | | 10 | ||
| 10 | | 10 | ||
| -10 | |||
| -10 | | -10 | ||
| -10 | | -10 | ||
|- | |- | ||
! Process time (s) | ! Process time (s) | ||
|120 | |||
|120 | |120 | ||
|120 | |120 | ||
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|- | |- | ||
! Nominal line width | ! Nominal line width | ||
! colspan=" | ! colspan="5" align="center"| Etched depths (nm) | ||
|- | |- | ||
! 30 nm | ! 30 nm | ||
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!60 nm | !60 nm | ||
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|- | |- | ||
!90 nm | !90 nm | ||
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|- | |- | ||
!120 nm | !120 nm | ||
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!150 nm | !150 nm | ||
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|- | |- | ||
! Nominal line width | ! Nominal line width | ||
! colspan=" | ! colspan="5" align="center"| Etch rates in trenches (nm/min) | ||
|- | |- | ||
!30 nm | !30 nm | ||
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|- | |- | ||
!60 nm | !60 nm | ||
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Line 109: | Line 119: | ||
|- | |- | ||
!90 nm | !90 nm | ||
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Line 115: | Line 126: | ||
|- | |- | ||
!120 nm | !120 nm | ||
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!150 nm | !150 nm | ||
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|- | |- | ||
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! colspan=" | ! colspan="5" align="center"| Etch rates in zep resist (nm/min) | ||
|- | |- | ||
! One point on wafer | ! One point on wafer | ||
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|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano12|Images]] | |[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano12|Images]] | ||
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano13|Images]] | |[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano13|Images]] | ||
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano121|Images]] | |||
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|} | |} |
Revision as of 10:27, 13 April 2011
Recipe | nano1.0 | nano1.1 | nano1.2 | nano1.3 | nano1.21 |
---|---|---|---|---|---|
C4F8 (sccm) | 52 | 52 | 52 | 52 | 75 |
SF6 (sccm) | 38 | 38 | 38 | 38 | 38 |
O2 (sccm) | 0 | 0 | 0 | 0 | 0 |
Coil power (W) | 800 (forward) | 600 (forward) | 800 (forward) | 600 (forward) | 800 (forward) |
Platen power (W) | 50 | 50 | 50 | 40 | 50 |
Pressure (mtorr) | 4 | 4 | 4 | 4 | 4 |
Temperature (degs C) | 10 | 10 | -10 | -10 | -10 |
Process time (s) | 120 | 120 | 120 | 120 | 120 |
Nominal line width | Etched depths (nm) | ||||
30 nm | |||||
60 nm | |||||
90 nm | |||||
120 nm | |||||
150 nm | |||||
Nominal line width | Etch rates in trenches (nm/min) | ||||
30 nm | |||||
60 nm | |||||
90 nm | |||||
120 nm | |||||
150 nm | |||||
Etch rates in zep resist (nm/min) | |||||
One point on wafer | |||||
Images | Images | Images | Images | Images | Images |
The nanoetch