Specific Process Knowledge/Lithography/EBeamLithography/EBLProcessExamples: Difference between revisions
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The single shot approach is illustrated in the center and right parts of the figure below as there are two ways to go about this. | The single shot approach is illustrated in the center and right parts of the figure below as there are two ways to go about this. | ||
*'''Big box approach''': This approach is illustrated in the center of the figure below. The mask is a single box of the desired size of the array. The beam is then pitched with the SHOT x, n command where n determines the beam pitch and hence the pitch of the resulting circles. | *'''Big box approach''': This approach is illustrated in the center of the figure below. The mask is a single box of the desired size of the array. The beam is then pitched with the SHOT x, n command where n determines the beam pitch and hence the pitch of the resulting circles. The size of the resulting circles is determined by the dwell time. | ||
*'''Small box approach''': This is illustrated on the right side of the figure. In this approach each circle is represented by a small 2x2 nm box, hence the pattern is an array of these small boxes and the beam pitch is set higher than the size of the box to produce a single beam shot in each box. | *'''Small box approach''': This is illustrated on the right side of the figure. In this approach each circle is represented by a small 2x2 nm box, hence the pattern is an array of these small boxes and the beam pitch is set higher than the size of the box to produce a single beam shot in each box. Again, the size of the resulting circles is determined by the dwell time. | ||
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