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Specific Process Knowledge/Lithography/EBeamLithography/AR-P 617: Difference between revisions

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*Substrate: 2" Si
*Substrate: 2" Si
*Acceleration: 1000 RPM/s
*Acceleration: 1000 RPM/s
*Speed: 4000 RPM
*Time: 60 s
*Time: 60 s
*Baking temperature: 200C, 180C and 160C
*Baking temperature: 200C, 180C and 160C