Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Al-Anneal furnace (C4)]] | [[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Al-Anneal furnace (C4)]] | ||
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[[Specific Process Knowledge/Thermal Process/E1 Furnace Oxidation (8")|Oxidation 8" (E1)]] | [[Specific Process Knowledge/Thermal Process/E1 Furnace Oxidation (8")|Oxidation 8" furnace (E1)]] | ||
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[[Specific Process Knowledge/Thermal Process/Resist Pyrolysis furnace|Resist Pyrolysis furnace (research tool)]] | [[Specific Process Knowledge/Thermal Process/Resist Pyrolysis furnace|Resist Pyrolysis furnace (research tool)]] | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Generel description | !Generel description | ||
|Dry and wet oxidation | | | ||
|Dry oxidation of gate | *Dry and wet oxidation | ||
|Dry and wet oxidation | *Boron pre-deposition and boron drive-in are also done in the furnace | ||
|Dry and wet oxidation of 100 mm and 150 mm wafers | | | ||
|Dry and wet oxidation and annealing of wafers from | *Dry oxidation of e.g. gate oxides layers | ||
|Dry oxidation of 100 mm wafers and small samples | | | ||
|Dry and wet oxidation of 150 mm and 200 mm wafers | *Dry and wet oxidation | ||
|Dry oxidation of silicon and annealing in N<sub>2</sub>. But the furnace is mainly being used for pyrolysis of different resists | *Phosphorous drive-in is also done in the furnace | ||
|Rapid thermal processing: RTA (annealing) | | | ||
*Dry and wet oxidation of 100 mm and 150 mm wafers | |||
*Oxidation and annealing of wafers from the LPCVD furnaces and PECVD4. | |||
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*Dry and wet oxidation and annealing of wafers from the wafer bonders and from PECVD4 and PECVD3 | |||
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*Dry oxidation of 100 mm wafers and small samples | |||
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*Dry and wet oxidation of 150 mm and 200 mm wafers | |||
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*Dry oxidation of silicon and annealing in N<sub>2</sub>. But the furnace is mainly being used for pyrolysis of different resists | |||
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*Rapid thermal processing: | |||
**RTA (annealing) | |||
**RTO (oxidation) | |||
**RTN (nitridation) | |||
**RTH (hydrogenation) | |||
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*Dry: O<sub>2</sub> | *Dry: O<sub>2</sub> | ||
*Wet: H<sub>2</sub>O ( | *Wet: H<sub>2</sub>O (steamer) | ||
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*Dry: O<sub>2</sub> | *Dry: O<sub>2</sub> | ||
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*1-30 100 mm wafers | *1-30 100 mm wafers | ||
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*1-30 50 mm wafers | *1-30 50 mm wafers | ||
*1-30 100 mm wafers | *1-30 100 mm wafers | ||
*1-30 150 mm wafers | *1-30 150 mm wafers | ||
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*1-30 50 mm wafers | *1-30 50 mm wafers | ||
*1-30 100 mm wafers | *1-30 100 mm wafers | ||
*Small samples on a carrier wafer, horizontal | |||
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*1-30 50 mm wafers | *1-30 50 mm wafers | ||
*1-30 100 mm wafers | *1-30 100 mm wafers | ||
*1-2 150 wafers, horizontal, less good uniformity | *1-2 150 mm wafers, horizontal, less good uniformity | ||
*Small samples on a carrier wafer, horizontal | |||
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*1-50 150 mm wafers | *1-50 150 mm wafers | ||
*1- | *1-50 200 mm wafers | ||
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*1-30 50 mm | *1-30 50 mm wafers | ||
* | *1-30 100 mm wafers | ||
*1-30 150 mm wafers | |||
*Small samples on a carrier wafers, horizontal | |||
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*Single-wafer process | *Single-wafer process | ||
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!'''Allowed materials''' | !'''Allowed materials''' | ||
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*All wafers have to be RCA cleaned, except boron pre-doped wafers from the same furnace | *All wafers have to be RCA cleaned, except boron pre-doped wafers from the same furnace | ||
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*All wafers have to be RCA cleaned | *All wafers have to be RCA cleaned | ||
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*All wafers have to be RCA cleaned, except phosphorous pre-doped wafers from furnace A4 | *All wafers have to be RCA cleaned, except phosphorous pre-doped wafers from furnace A4 | ||
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*All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD4 | *All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD4 | ||
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*All processed wafers have to be RCA cleaned, except for wafers from | *All processed wafers and samples have to be RCA cleaned, except for wafers from the wafers bonders and from PECVD4 and PECVD3 | ||
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* | *No RCA cleaning required | ||
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* | *All processed wafers have to be RCA cleaned. | ||
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*Only samples for resist pyrolysis, and all sample materials have to be approved by DTU Nanolab. Samples with metals and III-V materials are NOT allowed | *Only samples for resist pyrolysis, and all sample materials have to be approved by DTU Nanolab. Samples with metals and III-V materials are NOT allowed | ||