Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions

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 ==Oxidation==
-At DTU Nanolab we have seven furnaces and one RTP (rapid thermal processors) which can be used for thermal oxidation of silicon samples: Boron Drive-in + Pre-dep furnace (A1), Gate Oxide furnace (A2), Phosphorous Drive-in furnace (A3), Anneal-oxide furnace (C1), Anneal-Bond furnace (C3), Al-Anneal furnace (C4), Oxidation 8" (E1), Resist Pyrolysis furnace and RTP Annealsys.
+At DTU Nanolab we have eight furnaces and one RTP (rapid thermal processors) which can be used for thermal oxidation of silicon samples: Boron Drive-in and Pre-dep furnace (A1), Gate Oxide furnace (A2), Phosphorus Drive-in furnace (A3), Anneal-oxide furnace (C1), Anneal-Bond furnace (C3), Al-Anneal furnace (C4), Oxidation 8" furnace (E1), Resist Pyrolysis furnace and RTP Annealsys.
-Thermal oxidation can take place either by a dry process or by a wet process, depending on what furnace that is used for the oxidation. The film quality for a dry oxide is better than the film quality for a wet oxide with regards to density and dielectric constant. However, the oxidation rate is slow for dry oxidation.
+Thermal oxidation can take place either by a dry process or by a wet process, depending on what furnace that is used for the oxidation. The film quality for a dry oxide is better than the film quality for a wet oxide with regards to density and dielectric constant. However, the oxidation rate is slowest for dry oxidation.
+*Dry oxidation is used to grow 5 nm - 300 nm of silicon oxide. Dry oxidation can be done in the A1, A2, A3, C1, C3, C4, E1 and Resist Pyrolysis furnaces.
+*Wet oxidation is used to grow up to ~3 µm of silicon oxide. Wet oxidation can be done in the A1, A3, C1, C3 and E1 furnaces.
-*Dry oxidation is used to grow 5 nm - 300 nm of oxide in the furnaces: A1, A2, A3, C1, C3, C4, E1 and Resist Pyrolysis furnaces.
+Wafers with oxide layers thicker than ~3 µm can normally not be made in the cleanroom and will have to be bought from somewhere else (but check the wafer shop first - there might be some on stock). It is NOT allowed to oxidize the same wafers two times to get a thicker layer than 3 µm without approval.
-*Wet oxidation is used to grow up to ~3 µm of oxide in the furnaces: A1, A3, C1, C3 and E1 furnaces.
-Wafers with oxide layers thicker than >3 µm can normally not be made in the cleanroom and will have to be bought from somewhere else (but check the wafer shop first - there might be some on stock). It is NOT allowed to oxidize the same wafers two time to get a thicker layer than 3 µm without approval.
-Thermal oxidation can done at temperatures up to 1050 C - 1150 C, depending on the furnace - and especially the diameter of the furnace tube. At these high temperatures, the quartz tube in the furnace might start to deform, so therefore the oxidation times are restricted:
+Thermal oxidation can done at temperatures up to 1050 C - 1150 C, depending on the furnace - and especially the diameter of the quartz tube in the furnace. At these high temperatures, the quartz tube might start to deform, so therefore the oxidation times are restricted:
 *A1, A2, A3, C3 and C4 furnaces: Maximum allowed oxidation time at 1150 C: 8 hours
-*A1, A2, A3, C1, C3, C3, E1 furnaces: Maximum allowed oxidation time at 1100 C: 23 hours (this will result in ~3 um wet oxide)
+*A1, A2, A3, C1, C3, C4 and E1 furnaces: Maximum allowed oxidation time at 1100 C: 23 hours (this will result in ~3 um wet oxide)
 *Resist Pyrolysis furnace: Maximum allowed oxidation time at 1050 C: 3 hours
 The standard recipes, quality control limits and results for the Boron Drive-in + Pre-dep furnace (A1) and the Phosphorus Drive-in furnace (A3) can be found here:
 *[[Specific Process Knowledge/Thermal Process/A1 Furnace Boron drive-in|Standard recipes, QC limits and results for the Boron Drive-in + Predep furnace (A1)]]