Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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[[Specific_Process_Knowledge/Thermal_Process/A1_Bor_Drive-in_furnace|Boron Drive-in | [[Specific_Process_Knowledge/Thermal_Process/A1_Bor_Drive-in_furnace|Boron Drive-in and Pre-dep furnace (A1)]] | ||
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[[Specific_Process_Knowledge/Thermal_Process/A2_Gate_Oxide_furnace|Gate Oxide furnace (A2)]] | [[Specific_Process_Knowledge/Thermal_Process/A2_Gate_Oxide_furnace|Gate Oxide furnace (A2)]] | ||
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*Dry: O<sub>2</sub> | *Dry: O<sub>2</sub> | ||
*Wet: H | *Wet: H<sub>2</sub>O (bubbler) | ||
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*Dry: O<sub>2</sub> | *Dry: O<sub>2</sub> | ||
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*1-30 100 mm wafers | *1-30 100 mm wafers | ||
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* | *Small samples on a carrier wafer, horizontal | ||
*1-30 50 mm wafers | |||
*1-30 100 mm wafers | |||
*1-2 150 wafers, horizontal, less good uniformity | |||
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* | *1-50 150 mm wafers | ||
*1-25 200 mm wafers | |||
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*1-30 50 mm, 100 mm or 150 mm wafers per run | *1-30 50 mm, 100 mm or 150 mm wafers per run | ||
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*Chips on carrier | *Chips on carrier | ||
*100 mm or 150 mm wafers | *100 mm or 150 mm wafers | ||
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